NXP
Semiconductors
Product speci?cation
Silicon PIN diode
BAP64-02
ELECTRICAL CHARACTERISTICS
Tj
= 25°C unless otherwise speci?ed.
Note
1.
Guaranteed on AQL basis: inspection level S4, AQL
1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
forward voltage
IF
=
50
mA
0.95
1.1
V
IR
reverse leakage current
VR
=175
V
?
10
μA
VR
=20V
?
1
μA
Cd
diode capacitance
VR
=
0; f
=
1
MHz
0.48
?
pF
VR
=
1
V;
f
=
1
MHz
0.35
?
pF
VR
=
20
V; f
=
1
MHz
0.23
0.35
pF
rD
diode forward resistance
f
=
100
MHz; note
1
IF
=
0.5
mA
20
40
Ω
IF
=
1
mA
10
20
Ω
IF
=
10
mA
2
3.8
Ω
IF
=
100
mA
0.7
1.35
Ω
τL
charge carrier life time
when
switched
from
IF
=10mAto
1.55
IR=
6
mA; RL
=
100
Ω;
measured at IR
=3mA
?μs
LS
series inductance
0.6
?nH
SYMBOL
PARAMETER
VALUE
UNIT
Rth
j-s
thermal resistance from junction to soldering point
85
K/W
Rev. 06 - 9 January 2008
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